Mitsubishi will be sampling its MGFS52G38MB GaN power amplifier module (PAM) capable of supplying 16 W of average output power starting this month. The device can be used in 32T32R antenna ...
Empower RF Systems has announced the release of its latest C-UAS RF amplifier module, Model 1211, engineered for robust ...
This article is part of the TechXchange: Gallium Nitride (GaN). NXP rolled out a family of gallium-nitride (GaN)-based RF power amplifiers (PAs) that uniquely leverages top-side cooling to reduce the ...
Demand is increasing for power amplifier chips and other RF devices for 5G base stations, setting the stage for a showdown among different companies and technologies. The power amplifier device is a ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a world’s first compact 7GHz band gallium nitride (GaN) power amplifier module (PAM) with ...
Gallium nitride (GaN) is quickly becoming the semiconductor material of choice for both RF/microwave and higher-wavelength devices. It has long been a semiconductor foundation for light-emitting ...
5G technology has led to the introduction of a significant number of new RF features that need to be implemented in mobile networks while considering stringent constraints in board space and power ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...
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