Applied Materials Inc. said today that Foundry giant Taiwan Semiconductor Manufacturing Co. plans to use Applied's transistor fabrication technology for its 65nm process, extending oxynitride gate ...

Artificial intelligence (AI) has become the workload that defines today’s semiconductor scaling. Whether in hyperscale data centers training foundation models or at the network edge executing ...

Researchers unveil a roadmap for 2D transistor gate stack design, marking a key step toward ultra-efficient chips that could replace silicon technology. For decades, silicon-based CMOS technology has ...

Terry Hook of IBM recently contributed an article to ASN about FinFET isolation issues on bulk vs. SOI. It generated immense interest, and created lots of discussion on various LinkedIn groups. In ...

BEAVERTON, Ore. — Intel Labs says it has successfully fabricated an indium-gallium-arsenide field-effect transistor (FET) atop a silicon substrate by integrating a high-k gate stack. As in Intel's ...

Applied Materials has launched a system for creating the critical gate dielectric structures in 22nm logic chips. According to the technology specialist, the Applied Centura integrated gate stack ...

Infineon Technologies has announced that its researchers have completed testing of a full integrated circuit built with multigate FinFet transistors. Infineon Technologies has announced that its ...

Chip lithography and front-end fab processes weigh heavily in current research efforts, but also important is the conservation of energy consumption in manufacturing tools, and the growth of ...