Recent developments in IGBT and FWD (free wheeling diode) devices are enabling designers to achieve higher switching performance, lower electrical losses, and higher temperature operation in high ...

Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode ...

With the increasing demand for improving system efficiencies, the development of the low loss, high current, high voltage, rugged power modules for high frequency power electronic applications is of ...