Inspection and metrology are becoming more critical in the silicon carbide (SiC) industry amid a pressing need to find problematic defects in current and future SiC devices. Finding defects always has ...

The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...

Despite silicon carbide’s (SiC) promise over conventional silicon for the design of next-generation power electronics devices, broad adoption of this high-performance compound semiconductor has been ...

Silicon carbide is gaining traction in the power semiconductor market, particularly in electrified vehicles, but it’s still too expensive for many applications. The reasons are well understood, but ...

Scientists from the University of Basel claim to have identified the causes of low near-interface mobility in the silicon carbides (SiCs) used in power electronics. With the Evidence for carbon ...

Researchers at Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU) have developed a simple yet accurate method for finding defects in the latest generation of silicon carbide transistors. This ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...

Silicon carbide (SiC) is a crystalline material utilized to develop a wide array of electronic devices, including transistors and other high-power, high-frequency, and high-temperature devices. As ...

Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. SiC MOSFETs are designed and essentially ...