EDN

ACPL-W481-000E: Inverted Logic, High CMR Optocoupler for Intelligent Power Modules and IGBT/MOSFET Gate Drive

The high-speed ACPL-P481/W481 optocoupler contains a GaAsP LED, photo detector and a Schmitt trigger that eliminates the need for external waveform conditioning circuits. The totem pole output ...
EDN

PWM MOSFET Module – A Quick Analysis

In this post I will try to gain some insight into the electronics of a cheap PWM Power MOSFET Module. The module under the spotlight is the pretty common FR120N MOSFET Control Module which is a simple ...
Electronic Design

New Power Module Integrates SiC MOSFETs and IGBTs to Cut EV Costs

Silicon carbide (SiC) continues to carve out a place for itself in power electronics after decades of dominance by silicon. SiC-based power switches are becoming the gold standard in the three-phase ...
New Electronics

SemiQ expands Gen3 MOSFET line with high-power modules

SemiQ has unveiled seven new modules in its third-generation QSiC MOSFET product line, targeting high-power industrial applications and electric vehicle (EV) infrastructure. Gen3 MOSFET line expanded ...
Business Wire

Toshiba Develops Industry’s First 2200V Dual Silicon Carbide(SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...
Electronic Design

SiC MOSFETs Tackle Tough Conditions in High-Power Electronics

Compared to traditional silicon, power MOSFETs based on silicon carbide (SiC) can handle higher voltages with lower on-resistance (R DS(on)) and superior thermal conductivity, opening the door to ...