Editor’s Note: December 10, 2025: We’ve reviewed these selections to ensure they are available and competitively priced. To further update our coverage, with a focus on ease-of-use, we’ve called in ...
Abstract: In this article, an artificial neural network (ANN) augmented compact model is developed for the fast uncertainty quantification (UQ) of GaN high electron mobility transistors (HEMTs). The ...
Abstract: A compact model is developed to describe degradation behaviors of the polarization-voltage (P–V) and current-voltage (I–V) characteristics in Hf0.2Zr0.8O2 (HZO) anti-ferroelectric (AFE) ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback