Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint.

Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

The the Court of Justice for the European Union reports a decrease in new IP cases in 2024 despite a 12% increase in overall ...

The construction of these diodes is essentially a lightly doped n– layer above a heavier, doped n+ layer. The anode metal contact on the n– is used to create a Schottky junction, which can have ...

Department of Electrical and Electronic Engineering, University of Melbourne, Melbourne, Victoria 3010, Australia ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of ...

Another month and GSC Game World has delivered another massive update to Stalker 2: Heart of Chornobyl. Patch 1.3 for the ...

If you need a circuit that converts a momentary push button to a latching switch with low standby current, this design might ...

SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

New research from Stanford University has investigated the performance limits of transition metal dichalcogenide solar cells ...

While solar panels are great for long-term energy savings, problems can pop up. Knowing how to fix things, what your warranty ...

Spintronics is the use of a fundamental property of particles known as spin for information processing. In many ways, spintronics is analogous to electronics, which instead uses the electrical ...