With the recent announcement by Infineon that GaN use is reaching the “tipping point” for accelerated adoption, maybe it’s ...

Magnachip Semiconductor Corporation ("Magnachip" or "Company") (NYSE: MX) announced a significant expansion of its product ...

Toshiba has announced a 600V super-junction mosfet with a maximum on-resistance of 24mΩ ... Reverse recovery for the intrinsic diode is 8.5µC and 425ns, both at 400V, 40A, 100A/µs and Vg=0 .

Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint.

Magnachip Semiconductor has announced a significant expansion of its product line-up with the launch of 25 new 6th-generation ...

Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

The the Court of Justice for the European Union reports a decrease in new IP cases in 2024 despite a 12% increase in overall ...

Abstract: This article details a comparison between all-inorganic thin-film piezotronic p-n/n-p heterojunction diodes as wearable pressure sensors, with a comprehensive exploration of how the p-n ...

The construction of these diodes is essentially a lightly doped n– layer above a heavier, doped n+ layer. The anode metal contact on the n– is used to create a Schottky junction, which can have ...

Vacuum tubes were widely used as diodes and triodes in the electronics industry of ... Bell Labs announced the successful invention and development of the junction transistor. By the end of the 1950s, ...

Abstract: This article presents a sub-nanoseconds pulsed laser diode (LD) driver IC for multi-junction (MJ-) vertical-cavity surface-emitting laser (VCSEL) arrays. An ...